1 transistor 2sD1423, 2sD1423a silicon npn epitaxial planer type for low-frequency amplification complementary to 2sb1030 and 2sb1030a n features l optimum for high-density mounting. l allowing supply with the radial taping. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector eiaj:scC72 3:base new s type package 4.0 0.2 marking 2.54 0.15 1.27 1.27 3.0 0.2 15.6 0.5 2.0 0.2 0.7 0.1 0.45 0.1 123 +0.2 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 30 60 25 50 7 1 0.5 300 150 C55 ~ +150 unit v v v a a mw ?c ?c 2sD1423 2sD1423a 2sD1423 2sD1423a n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ceo v cbo v ceo v ebo h fe1 *1 h fe2 v ce(sat) f t c ob conditions v cb = 20v, i e = 0 v ce = 20v, i b = 0 i c = 10 m a, i e = 0 i c = 2ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 150ma *2 v ce = 10v, i c = 500ma *2 i c = 300ma, i b = 30ma *2 v cb = 10v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 30 60 25 50 7 85 40 typ 200 6 max 0.1 1 340 0.6 15 unit m a m a v v v v mhz pf *1 h fe1 rank classification rank q r s h fe1 85 ~ 170 120 ~ 240 170 ~ 340 *2 pulse measurement 2sD1423 2sD1423a 2sD1423 2sD1423a
2 transistor 2sD1423, 2sD1423a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 1200 1000 800 600 400 200 ta=25?c i b =10ma 7ma 6ma 9ma 8ma 5ma 4ma 3ma 2ma 1ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0 300 250 200 150 100 50 v ce =10v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 160 120 40 100 140 80 20 60 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 10 8 6 4 2 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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